Semiconductor light emitting device and method for producing the same

ABSTRACT

A semiconductor light emitting device comprises: a substrate; an n-type layer provided on the substrate and made of a nitride semiconductor material; a multiple quantum well structure active layer including a plurality of well layers each made of In x Ga (1-x-y) Al y N (0≦x, 0≦y, x+y&lt;1) and a plurality of barrier layers each made of In a Ga (1-a-t) Al t N (0≦s, 0≦t, s+t&lt;1), the multiple quantum well structure active layer being provided on the n-type layer; and a p-type layer provided on the multiple quantum well structure active layer and made of a nitride semiconductor material. The p-type layer contains hydrogen, and the hydrogen concentration of the p-type layer is greater than or equal to about 1×10 16  atoms/cm 3  and less than or equal to about 1×10 19  atoms/cm 3 .

BACKGROUND OF THE INVENTION

[0001] 1. Field of the Invention

[0002] The present invention relates to a group III-V compoundsemiconductor light emitting device including nitrogen as a majorcomponent, and a method for producing the same.

[0003] 2. Description of the Related Art

[0004] Recently, a high-luminance blue light emitting diode made of aGaN compound semiconductor has been put into practice, and a blue laserdiode has been vigorously developed. Group III-V nitride compoundsemiconductors attract much attention as a material for such lightemitting devices.

[0005] Conventionally, a nitride semiconductor is grown using hydridevapor phase epitaxy (hereinafter referred to as HVPE), metal organicchemical vapor deposition (hereinafter referred to as MOCVD), molecularbeam epitaxy (hereinafter referred to as MBE), or the like.

[0006] In the case of group III-V nitride compound semiconductors, it isconsiderably difficult to produce bulk crystal. It is thereforeconsiderably difficult to obtain a group III-V nitride compoundsemiconductor substrate on which a group III-V nitride compoundsemiconductor device is grown. For this reason, a sapphire substrate istypically employed. However, a great level of lattice mismatch occursbetween GaN (a group III-V nitride compound semiconductor) and asapphire substrate, e.g., a defect of 10⁹ to 10¹⁰/cm² is present in aGaN film after growth. Such a defect affects the light output or life ofa device. To avoid this, GaN is selectively grown to produce a pseudoGaN substrate which is a thick film GaN having a reduced defect. Byusing such a substrate, a laser device capable of room-temperaturecontinuous-wave operation can be realized.

[0007] In addition to defeats residual impurities have an adverse effecton a compound semiconductor light emitting device. The characteristicsand the life span of an arsenic-based or phosphorus-based compoundsemiconductor device are greatly affected by oxygen or carbon atomscontained in the device. Therefore, various attempts have been made toremove such residual impurities.

[0008] A residual impurity that causes a problem with a group III-Vnitride compound semiconductor light emitting device, is hydrogen. Whena nitride compound semiconductor device is grown by the above-describedmethods, organic metals and ammonia are used as materials of the device.Further, hydrogen or hydride (e.g., hydrogen chloride) is used as acarrier gas.

[0009] Therefore, residual hydrogen atoms may be present in a growingfilm of a nitride compound semiconductor. Particularly, when a p-typelayer essential for a nitride compound semiconductor light emittingdevice is grown, hydrogen atoms are likely to remain in the p-typelayer. This is because a hydrogen atom is likely to bind to an Mg atom,a Zn atom, or the like which is a dopant for the p-type layer. Forexample, Appl. Phys. Lett., Vol. 72 (1998), p. 1748, describes that theresidual hydrogen concentration of a growth film of a nitrogen compoundsemiconductor deposited by MOCVD is 2 to 3×10¹⁹ atoms/cm³, where the Mgconcentration is 2 to 3×10¹⁹ atoms/cm³, and the residual hydrogenconcentration increases with an increase in the Mg concentration.

[0010] When a hydrogen atom and a p-type dopant such as Mg or Zn bindtogether, the activity of the dopant is hindered, thereby creating ahighly resistant p-type layer.

[0011] Japanese Patent No. 2540791 discloses a known technology forpreventing a p-type layer from being caused to be highly resistant dueto hydrogen atoms. In the technology of Japanese Patent No. 2540791,after growing a group III-V nitride compound semiconductor doped withp-type impurities, annealing is conducted at a temperature of 400° C. ormore in an atmosphere not containing hydrogen. The annealing allowshydrogen atoms to be removed from the group III-V nitride compoundsemiconductor doped with the p-type impurities, thereby obtaining ap-type group III-V nitride compound semiconductor having a low level ofresistance.

[0012] Hydrogen atoms cannot be sufficiently removed from a p-type layeronly by annealing in an atmosphere not containing hydrogen as disclosedin Japanese Patent No. 2540791. Therefore, there is a problem with thetechnology disclosed in Japanese Patent No. 2540791 in that residualhydrogen atoms in the p-type layer hinder activation of the p-typeimpurities, and also cause a reduction in the life span of the device.This is because the residual hydrogen atoms are gradually diffused dueto the passage of electric current and therefore an active layer isdeteriorated. Japanese Patent No. 2540791 does not disclose theatmosphere which is used in the growth of the p-type layer.

[0013] Further, when the active layer contains In atoms, Mg and Inatoms, as well as hydrogen atoms, are diffused. Especially when theactive layer has a thin film quantum well structure, the diffusion ofboth Mg and In causes considerable deterioration in the active layer.

[0014] Furthermore, when the residual hydrogen concentration of ann-type layer is high, the resistance of the n-type layer is also great,thereby deteriorating device characteristics.

SUMMARY OF THE INVENTION

[0015] According to one aspect of the present invention, a semiconductorlight emitting device comprises: a substrate; an n-type layer providedon the substrate and made of a nitride semiconductor material; amultiple quantum well structure active layer including a plurality ofwell layers each made of In_(x)Ga_((1-x-y))Al_(y)N (0≦x, 0≦y, x+y<1) anda plurality of barrier layers each made of In_(a)Ga_((1-a-t))Al_(t)N(0≦s, 0≦t, s+t<1), the multiple quantum well structure active layerbeing provided on the n-type layer; and a p-type layer provided on themultiple quantum well structure active layer and made of a nitridesemiconductor material. The p-type layer contains hydrogen, and thehydrogen concentration of the p-type layer is greater than or equal toabout 1×10¹⁶ atoms/cm³ and less than or equal to about 1×10¹⁹ atoms/cm³.

[0016] In one embodiment of this invention, the p-type layer containsMg, and the Mg concentration of the p-type layer is greater than orequal to about 4×10¹⁹ atoms/cm³ and less than or equal to about 1×10²¹atoms/cm³.

[0017] In one embodiment of this invention, the semiconductor lightemitting device further comprises a p-type electrode for applying avoltage via the p-type layer to the multiple quantum well structureactive layer. The p-type electrode contains atoms selected from thegroup consisting of Pd, So, Y, La, Ce, Pr, Nd, Sm, Eu, Tb, Ti, Zr, Hf,V, Nb and Ta.

[0018] In one embodiment of this invention,the hydrogen concentration ofthe n-type layer is less than or equal to 1×10¹⁷ atoms/cm³.

[0019] In one embodiment of this invention, the semiconductor lightemitting device further comprises a layer including Al, wherein thep-type layer is provided, via the layer including Al, on the multiplequantum well structure active layer.

[0020] In one embodiment of this invention, the layer including Al has athickness of about 5 nm or more.

[0021] According to another aspect of the present invention, a methodfor producing a semiconductor light emitting device, comprises the stepsof: growing a nitride semiconductor material on a substrate to form ann-type layer; forming a multiple quantum well structure active layerincluding a plurality of well layers each made ofIn_(x)Ga_((1-x-y))Al_(y)N (0≦x, 0≦y, x+y<1) and a plurality of barrierlayers each made of In_(a)Ga_((1-a-t))Al_(t)N (0≦s, 0≦t, s+t<1), themultiple quantum well structure active layer being provided on then-type layer; and growing a nitride semiconductor material an themultiple quantum well structure active layer to form a p-type layer. Thestep of growing the p-type layer includes the step of growing a nitridesemiconductor material in an atmosphere not containing hydrogen gaswhile keeping a temperature of the substrate at a first growthtemperature.

[0022] In one embodiment of this invention, the step of forming thep-type layer further includes the step of lowering the temperature ofthe substrate from the first growth temperature to about 400° C. In theatmosphere not containing hydrogen gas after the step of growing thenitride semiconductor material in the atmosphere not containing hydrogengas.

[0023] Thus, the invention described herein makes possible the advantageof providing a semiconductor device having a long life.

[0024] These and other advantages of the present invention will becomeapparent to those skilled in the art upon reading and understanding thefollowing detailed description with reference to the accompanyingfigures.

BRIEF DESCRIPTION OF THE DRAWINGS

[0025]FIG. 1 is a cross-sectional view illustrating an LED device 1according to Example 1 of the present invention.

[0026]FIG. 2 is a graph showing the Mg and hydrogen concentrations ofthe LED device 1 measured using SHIMS.

[0027]FIG. 3 is a graph showing a result of an aging test for the LEDdevice 1 of Example 1 and LED devices of Comparative Examples 1 through3.

[0028] FIGS. 4(a) through 4(d) are graphs showing SHIMS profiles of thevicinity of the active layers of the LED devices of Example 1 andComparative Example 1 through 3 before aging.

[0029] FIGS. 4(e) through 4(h) are graphs showing SHIMS profiles of thevicinity of the active layers of the LED devices of Example 1 andComparative Example 1 through 3 after a 1000-hour aging test.

[0030]FIG. 5 is a graph showing the relative luminance of LED devicesafter a 1000-hour aging test with respect to the hydrogen concentrationof a p-type contact layer 15 of FIG. 1.

[0031]FIG. 6 to a cross-sectional view illustrating an LED device 601according to Example 2 of the present invention.

[0032]FIG. 7 is a graph showing the relative luminance of LED devicesafter a 1000-hour aging test with respect to the thickness of one welllayer in an active layer 42 of FIG. 2.

[0033]FIG. 8 is a cross-sectional view illustrating an OLD device 801according to Example 3 of the present invention.

[0034]FIG. 9 is a graph showing a variation in a threshold current withrespect to aging time.

[0035]FIG. 10 is a graph showing the life of the OLD device 801 withrespect to the hydrogen concentration of a p-type contact layer 30 ofFIG. 8.

[0036]FIG. 11 is a graph showing the life of the OLD device 801 withrespect to the Mg concentration of a p-type layer.

[0037]FIG. 12 is a cross-sectional view illustrating an OLD device 1201according to Example 4 of the present invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0038] Hereinafter, the present invention will be described by way ofillustrative examples with reference to the accompanying drawings.

EXAMPLE 1

[0039] An exemplary light emitting diode (LED) according to Example 1 ofthe present invention will be described below.

[0040]FIG. 1 is a cross-sectional view illustrating an LED device 1according to Example 1 of the present invention. The LED device 1 wasproduced using the following procedure.

[0041] On a sapphire substrate 10 (0001-plane), an AlN buffer layer 11was grown at a substrate temperature of about 550° C., and an n-typeGaN:Si contact layer 12 having a thickness of about 5 μm was grown at asubstrate temperature of about 1100° C., both by atmospheric pressureMOCVD. The term “GaN:Si” herein means “GaN doped with Si”. In thisgrowth, the V/III ratio was about 2000. Up to this growth step, both thecarrier gas and the bubbling gas for an organic metal were hydrogen gas.

[0042] Thereafter, the substrate temperature was lowered to about 760°C. The carrier gas and the bubbling is gas for the organic metal werechanged to nitrogen gas. A multiple quantum well structure active layer13 was grown under a condition where the oxygen partial pressure of gasinside a reaction furnace was about 0.7 Torr. In this case, the multiplequantum well structure active layer 13 is composed of five alternatelayerings of an In_(0.35)Ga_(0.65)N:Si well layer (about 2 nm thick) anda GaN:Si barrier layer (about 4 nm thick). At substantially the sametemperature, an Al_(0.1)Ga_(0.9)N:Mg anti-evaporation layer 14 having athickness of 20 nm was grown. Thereafter, the substrate temperature wasincreased to about 1050° C, and a p-type Gan:Mg contact layer 15 havinga thickness of about 0.3 μm was grown. Thus, the step of forming thep-type contact layer 15 (p-type layer) included growing a nitridesemiconductor material in an atmosphere not containing hydrogen gaswhile keeping the substrate temperature at about 1050° C. (first growthtemperature). Note that the carrier gas and the bubbling gas for anorganic metal may be an inert gas of argon, helium, or the like, otherthan hydrogen.

[0043] After the above-described light emitting device structure hadbeen provided on the sapphire substrate 10, the substrate temperaturewas lowered while the carrier gas was still nitrogen gas. Thus, afterthe production of the p-type contact layer 15, the temperature of thesapphire substrate 10 was lowered from about 1050° C. to about 400° C.In the atmosphere not containing hydrogen gas. However, the sapphiresubstrate 10 is not necessarily cooled to room temperature in theatmosphere not containing hydrogen gas. The atmosphere may containhydrogen gas after the substrate temperature is lowered to about 400° C.

[0044] The wafer having the grown device structure was split into twopieces. One of the two pieces was subjected to a SHIMS measurementdescribed later. The other piece was subjected to subsequent processesas follows. The other piece of the wafer was subjected to etching sothat part of the n-type contact layer 12 was exposed. An n-type Au/Moelectrode 16 was formed on the exposed surface of the n-type contactlayer 12. A p-type Au/Ni electrode 17 was formed on a surface of thep-type contact layer 15. Thus, completing the LED 1. The term “Au/Moelectrode” means that the electrode is composed of multiple layers of Auand Mo.

[0045] The LED device 1 emitted light having a wavelength of about 470nm with a luminance of about 3 cd at a driving current of about 20 mA.In this case, an operating voltage was about 3.3 V. A driving current ofabout 20 mA was passed through the LED device 1 for about 1000 hours atroom temperature. Substantially no change was found in the wavelengthand luminance of light emitted by the LED device 1 and in the operatingvoltage of the LED device 1 after such a 1000-hour test. Thus, along-life LED device is realized.

[0046] As shown in FIG. 1, the LED device 1 (semiconductor lightemitting device) of the present invention includes: a sapphire substrate10 (substrate); an n-type GaN:Si (nitride semiconductor) contact layer12 (n-type layer) provided via a buffer layer 11 on the sapphiresubstrate 10; a multiple quantum well structure active layer 13 providedon the n-type contact layer; and a p-type GaN (nitride semiconductor)contact layer 15 (p-type layer) provided via the anti-evaporation layer14 on the multiple quantum well structure active layer 13.

[0047] The Mg and hydrogen concentrations of the LED device 1 weremeasured by SHIMS (Secondary Ion Mass Spectrometry). Note that such aSHIMS measurement was conducted for the one piece of the split wafer.

[0048]FIG. 2 shows the Mg and hydrogen concentrations of the LED device1 measured using the SHIMS. The Mg and hydrogen concentrations of thep-type contact layer 15 were about 7×10¹⁹ atoms/cm³ and about 2×10¹⁶atoms/cm³, respectively. The hydrogen concentration of the n-typecontact layer 12 was less than or equal to about 1×10¹⁷ atoms/cm³ whichis the limit of detection. The hydrogen concentration of the p-typecontact layer 15 is preferably greater than or equal to about 1×10¹⁶atoms/cm³ and less than or equal to about 1×10¹⁹ atoms/cm³ in order toachieve a long-life LED device. Further, the Mg concentration of thep-type contact layer 15 is preferably greater than or equal to about4×10¹⁹ atoms/cm³ and less than or equal to about 1×10²¹ atoms/cm³. Ahigh Mg concentration of the p-type contact layer 15 leads to a highhydrogen concentration thereof, and therefore is not preferable.

[0049] In Example 1, the oxygen partial pressure of the gas inside thereaction furnace was about 0.7 Torr upon the growth of the p-typecontact layer 15. As the amount of oxygen in the gas inside the reactionfurnace was increased, the hydrogen concentration of the p-type contactlayer 15 was decreased. It is believed that such a decrease is caused bythe removal of hydrogen atoms (residual hydrogen atoms) in the p-typecontact layer 15 due to the union of oxygen and hydrogen. Therefore, thehydrogen concentration of the p-type contact layer 15 can be controlledby adjusting the oxygen concentration of the gas inside the reactionfurnace. It was found that if the oxygen partial pressure percentage ofthe total pressure of the gas inside the reaction furnace is greaterthan or equal to about 0.00001% (i.e., about 7.6×10⁻⁵ Torr or more) andless than or equal to about 1% (7.6 Torr or less), the hydrogenconcentration of the p-type contact layer 15 is less than or equal to4×10¹⁶ atoms/cm³. Alternatively, in place of or in addition to adjustingthe oxygen (O₂) concentration, the hydrogen concentration of the p-typecontact layer 15 may be controlled by adjusting the concentration of atleast one of bromine, chloride, ozone, CO, CO₂, NO and NO₂ in the gasinside the reaction furnace in combination with the concentration ofoxygen.

[0050] As Comparative Example 1, an LED device was produced using thesame growth procedure as described above except that the active layer 13was composed of a single In_(0.35)Ga_(0.65)N:Si layer (about 20 nmthick). The LED device of Comparative Example 1 was measured using theSHIMS. As a result, the p-type contact layer of the LED device ofComparative Example 1 had an Mg concentration of about 7×10¹⁶ atoms/cm³and a hydrogen concentration of about 2×10¹⁸ atoms/cm³, and a SHIMSprofile similar to that shown in FIG. 2 was obtained. The LED device ofComparative Example 1 emitted light having a wavelength of about 470 nmwith a luminance of about 1.5 cd at a driving current of about 20 mA. Inthis case, the operating voltage was about 3.3 V.

[0051] As Comparative Example 2, an LED device was produced where thesame growth procedure as described above was used until the growth ofthe multiple quantum well structure active layer 13, and thereafter thecarrier gas and the bubbling gas for an organic metal were changed tohydrogen gas, an Al_(0.1)Ga_(0.9)N:Mg anti-evaporation layer 14 having athickness of about 20 nm and a p-type contact layer 15 having athickness of about 0.3 μm were grown, and after growth of the completedevice structure, the substrate temperature was lowered where thecarrier gas was still hydrogen gas as conventional. If the device is notsubjected to thermal annealing, the p-type contact layer 15 remainshighly resistant. Therefore, the device of Comparative Example 2 wassubjected to thermal annealing for about 20 minutes at about 800° C. Ina nitrogen atmosphere so that the resistance of the p-type contact layer15 was lowered.

[0052] After the thermal annealing, the LED device of ComparativeExample 2 was measured using the SHIMS. As a result, the p-type contactlayer 15 of the LED device of Comparative Example 2 had an Mgconcentration of about 7×10¹⁹ atoms/cm³ and a hydrogen concentration ofabout 6×10¹⁸ atoms/cm³. The LED device of Comparative Example 2 emittedlight having a wavelength of about 470 nm with a luminance of about 2.6cd at a driving current of about 20 mA. In this case, the operatingvoltage was about 3.7 V.

[0053] Further, as Comparative Example 3, an LED device was producedusing the same growth procedure as described in Comparative Example 2except that the active layer 13 was composed of a singleIn_(0.35)Ga_(0.65)N:Si layer (about 20 nm thick). After the thermalannealing, the LED device of Comparative Example 3 was measured usingthe SHIMS. As a result, the p-type contact layer 15 of the LED device ofComparative Example 3 had an Mg concentration of about 7×10¹⁹ atoms/cm³and a hydrogen concentration of about 6×10¹⁸ atoms/cm³. The LED deviceof Comparative Example 3 emitted light having a wavelength of about 470nm with a luminance of about 1.2 cd at a driving current of about 20 mA.In this case, the operating voltage was about 3.7 V.

[0054]FIG. 3 shows a result of an aging test for the LED device 1 ofExample 1 and the LED devices of Comparative Example 1 through 3. Theluminance of the LED device of Comparative Example 2 was considerablylowered after 1000-hour aging. For the LED device of Comparative Example1 having the single active layer the luminance was lowered after1000-hour aging. In contrast, the luminance of the LED device 1 ofExample 1 was not lowered after 1000-hour aging, i.e., the LED device 1has a long life. Comparing Example 1 with Comparative Example 1, thelife elongation effect of an LED device due to a reduction in thehydrogen concentration of the p-type contact layer 15 was great when theLED device had a multiple quantum well structure active layer.

[0055] FIGS. 4(a) through 4(d) show SHIMS profiles of the vicinity ofthe active layers of the LED devices of Example 1 and ComparativeExample 1 through 3 before aging. FIGS. 4(e) through 4(h) show SHIMSprofiles of the vicinity of the active layers of the LED devices ofExample 1 and Comparative Example 1 through 3 after 1000-hour aging. Ineach of FIGS. 4(a), 4(c), 4(e) and 4(g), the peaks of In concentrationcorrespond to the well layers of the multiple quantum well structureactive layer, and the valleys of In concentration correspond to thebarrier layers of the multiple quantum well structure active layer. Ascan be seen from FIGS. 4(c) and 4(g), in the LED device of ComparativeExample 2, In atoms in the well layers of the multiple quantum wellstructure active layer were diffused into the barrier layers. As can beseen from FIGS. 4(a) and 4(e), the diffusion phenomenon of the In atomsof the well layers into the barrier layers did not occur in the LEDdevice 1 of Example 1.

[0056]FIG. 5 shows the relative luminance of the LED devices after1000-hour aging with respect to the hydrogen concentration of the p-typecontact layer 15. The relative luminance is represented by a relativevalue where the luminance at the initial period of the aging test isregarded as 100. In each of the LED devices, the n-type electrode 16 wasmade of Au/Mo, and the p-type electrode 17 was made of Au/Pd or Au/Ni.As can be seen from FIG. 5, when the p-type electrode 17 was made ofAu/Pd, if the hydrogen concentration of the p-type contact layer 15 wasless than or equal to about 1×10¹⁹ atoms/cm³, the luminance of the LEDdevices was not lowered even after 1000-hour aging. Further, when thep-type electrode 17 was made of Au/Ni, If the hydrogen concentration ofthe p-type contact layer 15 was less than or equal to about 4×10¹⁸atoms/cm³, the luminance of the LED devices was not lowered even after1000-hour aging.

[0057] As described above, the p-type electrode 17 is preferably made ofAu/Pd. This is because Pd s a hydrogen storage metal. Specifically,hydrogen atoms (residual hydrogen atoms) in the p-type contact layer 15are absorbed by the p-type electrode 17, thereby preventing the residualhydrogen atoms from being diffused into the multiple quantum wellstructure active layer 13. Examples of known hydrogen storage metalsinclude Pd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Tb, Ti, Zr, Hf, V, Nb and Ta.That is, if the p-type electrode 17 includes a hydrogen storage metal,the p-type electrode 17 can absorb the residual hydrogen atoms. Thep-type electrode 17 may have a multi-layer structure including ahydrogen storage metal. Alternatively, the p-type electrode 17 may bemade of an intermetallic compound including a hydrogen storage metal.

[0058] For the purpose of evaluating the influence of the hydrogenconcentration of the n-type contact layer on the life of an LED device,the LED device of the present invention was produced in the followingway. An AlN buffer layer 11 and an n-type GaN:Si contact layer 12 weregrown on a sapphire substrate 10 (0001-plane) where the oxygen partialpressure of the gas inside the reaction furnace was about 10 Torr (thehydrogen concentration was about 1.3%). Thereafter, the carrier gas andthe bubbling gas for an organic metal were changed to nitrogen gas, andthe residual oxygen partial pressure of the gas inside the furnace wasset to about 0.7 Torr (the residual oxygen concentration was about0.1%), followed by the remaining production steps as above. Thus,completing the LED device. The LED device was measured using the SHIMS.As a result, the Mg and hydrogen concentrations of the p-type contactlayer 15 were about 7×10¹⁹ atoms/cm³ and about 2×10¹⁶ atoms/cm³. Thehydrogen concentration of the n-type contact layer 12 was about 3×10¹⁷atoms/cm³. The initial characteristics of the LED device were as followsthe wavelength of emitted light was about 470 nm; the luminance wasabout 2.7 cd, and the operating voltage was about 4.1 V, at a drivingcurrent of about 20 mA. The characteristics of the LED device after1000-hour aging were as follows: the wavelength of emitted light wasabout 470 nm; the luminance was about 2.4 cd and the operating voltagewas about 4.5 V, at a driving current of about 20 mA. Thus, a decreasein luminance and an increase in operating voltage were found In the LEDdevice after 1000-hour aging. Note that an increase in operating voltagemeans an increase in device resistance, since the driving current wasfixed at about 20 mA.

[0059] LED devices, each of which has a p-type layer grown under thesame conditions as described above and an n-type contact layer 12including a different concentration of hydrogen, were produced. When then-type contact layer 12 has a hydrogen concentration of about 10×10¹⁷atoms/cm³ or more, the operating voltage of the LED device was increasedimmediately after the start of aging, and an increase in operatingvoltage and a decrease in luminance were found in the LED device after1000-hour aging. Therefore, the hydrogen concentration of the n-typecontact layer 12 (the n-type layer) is preferably about 10×10¹⁷atoms/cm³ or less in order to realize a long-life LED device.

[0060] As shown in FIG. 1, the p-type contact layer 15 of the LED device1 is provided via the anti-evaporation layer 14 on the multiple quantumwell structure active layer 13. The anti-evaporation layer 14 includesAl atoms. The Al atoms prevent the residual hydrogen atoms in the p-typecontact layer 15 from being diffused into the multiple quantum wellstructure active layer 13, i.e., the Al atoms prevent deterioration ofthe multiple quantum well structure active layer 13. Note that thethickness of the anti-evaporation layer 14 (a layer including Al) ispreferably about 5 nm or more in order to sufficiently obtain such aneffect.

[0061] The composition of a well layer is not limited toIn_(0.35)Ga_(0.65)N, and may include Al. A typical composition of thewell layer is represented by In_(x)Ga_((1-x-y))Al_(y)N (where 0≦x, 0≦y,x+y<1). The composition of a barrier layer is not limited to GaN. Atypical composition of the barrier layer is represented byIn_(a)Ga_((1-a-t))Al_(t)N (where 0≦s, 0≦t, s+t<1).

[0062] The substrate to not limited to sapphire (0001, i.e., C-plane).Alternatively, A-plane or M-plane sapphire may be employed. Thesubstrate may be made of GaN, Sic, Si or ZnO. The crystal growth methodis not limited to MOCVD. When the LED device of the present inventionwas produced by MBE, the LED device had a luminance profile similar tothat as shown in FIG. 3.

[0063] Thus, according to the present invention, an LED device having aresidual hydrogen concentration which is appropriately controlled isachieved, without dependence on the crystal growth method used, and along-life LED is realized.

EXAMPLE 2

[0064] An exemplary light emitting diode (LED) according to Example 2 ofthe present invention will be described below. The LED device includes aGaN substrate.

[0065]FIG. 6 is a cross-sectional view illustrating an LED device 601according to Example 2 of the present invention. The LED device 601 wasproduced using the following procedure.

[0066] A film of GaN:Si having a thickness of about 300 μm was grown ona sapphire substrate (0001-plane) using HVPE. Thereafter, the sapphiresubstrate was removed by polishing to obtain a GaN (0001-plane)substrate 40. An n-type GaN: Si contact layer 41 having a thickness ofabout 1 μm was grown at a substrate temperature of about 1100° C. byatmospheric pressure MOCVD. Up to this growth step, both the carrier gasand the bubbling gas for an organic metal were hydrogen gas.

[0067] Thereafter, the substrate temperature was lowered to about 760°C. The carrier gas and the bubbling gas for an organic metal werechanged to nitrogen gas. A multiple quantum well structure active layer42 was grown. In this case, the multiple quantum well structure activelayer 42 is compound of four alternate layerings of anIn_(0.35)Ga_(0.65)N:Si (about 2 nm thick) and a GaN:Si barrier layer(about 4 nm thick). An Al_(0.1)Ga_(0.9)N:Mg anti-evaporation layer 43having a thickness of 20 nm was grown at a temperature of about 1000° C.Thereafter, the substrate temperature was increased to about 1050° C.,and a p-type GaN:Mg contact layer 44 having-a thickness of about 0.3 μmwas grown. After the above-described light emitting device structure hadbeen provided on the GaN substrate 40, the substrate temperature waslowered while the carrier gas was still nitrogen gas, where thesubstrate temperature drop rate was net to about 10° C./min.

[0068] An n-type Ti/Al electrode 45 was formed on a bottom surface ofthe GaN (GaN:Si) substrate 40 and a p-type Au/Pd electrode 46 was formedon a top surface of the p-type contact layer 44.

[0069] The thus-constructed LED device 601 emitted light having awavelength of about 470 nm with a luminance of about 3.3 cd at a drivingcurrent of about 20 mA. In this case, the operating voltage was about3.1 V.

[0070] The LED device 601 was subjected to a 1000-hour aging test atroom temperature where a driving current was about 20 mA. As a result,there was substantially no change in the wavelength of emitted light,luminance and operating voltage even after 1000-hour aging.

[0071] The Mg and hydrogen concentrations of the LED device 601 weremeasured using the SHIMS. As a result, the Mg and hydrogenconcentrations of the p-type contact layer 44 were about 9×10¹⁹atoms/cm³ and about 3×10¹⁶ atoms/cm³, respectively. The hydrogenconcentration of the n-type contact layer 41 was less than or equal toabout 1×10¹⁷ atoms/cm³ which is the limit of detection. When the Mgconcentration of the p-type contact layer 44 was about 9×10¹⁹ atoms/cm³,if the substrate temperature drop rate after the crystal growth was lessthan or equal to about 25° C./min, the hydrogen concentration of thep-type contact layer 44 was less than or equal to about 4×10¹⁶atoms/cm³. Such SHIMS measurement was conducted using a wafer before then-type electrode 45 and the p-type electrode 46 were formed.

[0072] For the purpose of evaluating the influence of the thickness ofthe active layer 42, on the life of an LED device, a variety of the LEDdevices of the present invention were produced where the thickness ofone wall layer in the active layer 42 is in the range of from about 1 toabout 50 nm.

[0073] An LED device of Comparative Example 1 was produced in thefollowing way. After the growth of the active layer 42, the carrier gasand the bubbling gas for an organic metal were changed to hydrogen gas.An Al_(0.1)Ga_(0.9)N:Mg anti-evaporation layer 43 and a p-type contactlayer 44 having a thickness of about 0.3 μm were successively grown.After growing a complete device structure, the substrate temperature waslowered where the carrier gas was still hydrogen gas, as in aconventional method. A variety of the LED devices of the ComparativeExample 1 were produced where the thickness of one well layer in theactive layer 42 is in the range of from about 1 to about 50 nm.

[0074]FIG. 7 shows the relative luminance of the LED devices of theComparative Example 1 after 1000-hour aging with respect to thethickness of one well layer in the active layer 42. The relativeluminance is represented by a relative value where the luminance at theinitial period of the aging test is regarded as 100. As can be seen fromFIG. 7, when the thickness of one well layer in the active layer 42 wasless than or equal to about 15 nm, the LED device of Comparative Example1 was considerably deteriorated. The SHIMS analysis revealed that suchdeterioration was due to the diffusion of hydrogen and Mg atoms. Incontrast, diffusion of In, hydrogen and Mg were not substantially foundin the. LED device 601 of Example 2. On the other hand, for the devicesof both Example 2 and Comparative Example 1, when the thickness of onewell layer in the active layer 42 was greater than or equal to about 15nm, the luminance was lowered after the 1000-hour aging. The reason isthat the increased thickness of one well layer in the active layer 42leads to lattice relaxation in the InGaN active layer, therebydeteriorating the crystallinity of the active layer.

EXAMPLE 3

[0075] An exemplary laser diode (OLD) according to Example 3 of thepresent invention will be described below.

[0076]FIG. 8 is a cross-sectional view illustrating an OLD device 801according to Example 3 of the present invention. The OLD device 801 wasproduced using the following procedure.

[0077] On a sapphire substrate 20 (0001-plane), a GaN buffer layer 21was grown at a substrate temperature of about 550° C., and an n-typeGaN:Si contact layer 22 having a thickness of about 4 μm was grown at asubstrate temperature of about 1100° C., by low pressure MOCVD of about76 Torr. Thereafter, an In_(0.05)Ga_(0.95)N:Si anti-crack layer 23having a thickness of about 50 nm was grown at a substrate temperatureof about 800° C. Thereafter, the substrate temperature was increased toabout 1100° C. again, and an n-type Al_(0.1)Ga_(0.9)N:Si cladding layer24 having a thickness of about 0.5 μm and an n-type GaN:Si guide layer25 having a thickness of about 0.1 μm were successively grown. Up to thegrowth step, both the carrier gas and the bubbling gas for an organicmetal were hydrogen gas.

[0078] Thereafter, the substrate temperature was lowered to about 760°C., and the carrier gas and the bubbling gas for an organic metal werechanged to nitrogen gas. An In_(0.05)Ga_(0.95)N:Si layer having athickness of about 4 nm was grown under a condition where the oxygen(O₂) partial pressure of the gas inside the reaction furnace was about0.2 Torr (the oxygen concentration was about 0.3%). Thereafter, amultiple quantum well structure active layer 26 composed of fivealternate layerings of an In_(0.15)Ga_(0.85)N:Si well layer (about 2 nmthick) and an In_(0.05)Ga_(0.95)N:Si barrier layer (about 4 nm thick)was grown. At substantially the same temperature, anAl_(0.1)Ga_(0.9)N:Mg anti-evaporation layer 27 having a thickness ofabout 10 nm was grown.

[0079] Thereafter, a p-type GaN:Mg guide layer 28 having a thickness ofabout 0.1 μm, a p-type Al_(0.1)Ga_(0.9)N:Mg cladding layer 29 having athickness of about 0.5 μm, and a p-type GaN:Mg contact layer 30 having athickness of about 0.3 μm were grown at a substrate temperature of about1100° C. where the carrier gas and the bubbling gas for an organic metalwere still nitrogen gas. Thus, the step of forming the p-type layer(including the p-type GaN:Mg guide layer 28, the p-typeAl_(0.1)Ga_(0.9)N:Mg cladding layer 29, and the p-type GaN:Mg contactlayer 30) included growing a nitride semiconductor material in anatmosphere not containing hydrogen gas at a low pressure of about 76Torr while keeping the substrate temperature at about 1100° C. (firstgrowth temperature). Note that the carrier gas and the bubbling gas forthe organic metal may be an inert gas of argon, helium, or the like,other than hydrogen.

[0080] After the above-described light emitting device structure hadbeen provided on the sapphire substrate 20, the substrate temperaturewas lowered without introduction of hydrogen gas into the reactionfurnace Thus, after the production of the p-type layer (including thep-type Gan:Mg guide layer 28, the p-type Al_(0.1)Ga_(0.9)N:Mg claddinglayer 29, and the p-type GaN:Mg contact layer 30), the temperature ofthe sapphire substrate 20 was lowered from about 1100° C. to roomtemperature in an atmosphere not containing hydrogen gas at a lowpressure of about 76 Torr. However, the sapphire substrate 20 was notnecessarily cooled to room temperature in the atmosphere not containinghydrogen gas at a low pressure of about 76 Torr. The ambience maycontain hydrogen gas after the substrate temperature is lowered to about4000° C.

[0081] The wafer having the grown device structure was split into twopieces. One piece of the wafer was subjected to etching so that part ofthe n-type contact layer 22 was exposed where the exposed region was inthe form of a strip having a width of about 200 μm. A p-type Au/Pdelectrode 32 was formed in the form of a strip having a thickness ofabout 2 μcm on a surface of the p-type contact layer 30. An n-type Ti/Alelectrode 31 was formed on a surface of the n-type contact layer 22.

[0082] The OLD device 801 performed CW oscillation (continuous waveoperation) at room temperature where a threshold current was about 25 mAand a threshold voltage was about 5.1 V.

[0083] As shown in FIG. 8, the OLD device 801 (semiconductor lightemitting device) of the present invention includes: a sapphire substrate20 (substrate); an n-type layer (including the n-type contact layer 22,the n-type cladding layer 24 and the n-type guide layer 25) made of asemiconductor material and successively provided via a buffer layer 21on the sapphire substrate 20; a multiple quantum well structure activelayer 26 provided on the n-type layer: and a p-type layer (including thep-type guide layer 28, the p-type cladding layer 29 and the p-typecontact layer 30) made of a semiconductor material and successivelyprovided via the anti-evaporation layer 27 on the multiple quantum wellstructure active layer 26.

[0084] Although the OLD element 801 of FIG. 8 includes the anti-cracklayer 23, such a structure is not essential for laser oscillation. InExample 4 described later, an OLD device not including an anti-cracklayer will be described.

[0085] The hydrogen and Mg concentrations of the OLD device 801 weremeasured using the SHIMS. Note that such a SHIMS measurement wasconducted for the other piece of the split wafer.

[0086] All layers of the p-type layer, i.e, the p-type guide layer 28,the p-type cladding layer 29 and the p-type contact layer 30, each havea hydrogen concentration of about 3×10¹⁶ atoms/cm³ and a Mgconcentration of about 9×10¹⁹ atoms/cm³.

[0087] By the same principle as described in Example 1, the hydrogenconcentration of the p-type layer can be controlled by adjusting theoxygen concentration of the gas inside the reaction furnace uponformation of the p-type layer. Alternatively, in place of or in additionto adjusting only the oxygen concentration, the hydrogen concentrationof the p-type layer may be controlled by adjusting the concentration ofat least one of bromine, chloride, ozone, CO, CO₂, NO and NO₂ in the gasinside the reaction furnace in combination with the concentration ofoxygen. In Example 3, the O₂ concentration of the gas inside thereaction furnace was about 0.3%. It was found that if the oxygen partialpressure percentage of the total pressure of the gas inside the reactionfurnace is greater than or equal to about 0.00001% and less than orequal to about 1%, the hydrogen concentration of the p-type layer(including the p-type guide layer 28, the p-type cladding layer 29 andthe p-type contact layer 30) is less than or equal to 4×10¹⁶ atoms/cm³.

[0088] As Comparative Example 1, an OLD device was produced using thesame growth procedure as described above except that the p-type layer(including the p-type guide layer 28, the p-type cladding layer 29 andthe p-type contact layer 30) was grown where the carrier gas washydrogen, and the resultant structure was subjected to annealing forabout 20 minutes at about 800° C. in an atmosphere having a nitrogenconcentration of about 100%. The LD device of Comparative Example 1 wasfound to perform CW oscillation at room temperature where a thresholdcurrent was about 30 mA and a threshold voltage was about 5.7 V. Notethat the hydrogen concentration of the p-type layer in the LD device ofComparative Example 1 after the annealing was measured using the SIMSand the result was about 2×10¹⁹ atoms/cm³.

[0089] An LD device of Comparative Example 2 was produced. The LD ofComparative Example 2 had the same structure aB that of the LD device801 of Example 3 except that the p-type layer (including the p-typeguide layer 28, the p-type cladding layer 29 and the p-type contactlayer 30) had a hydrogen concentration of less than or equal to about8×10¹⁵ atoms/cm³ which is the limit of detection. The LD device ofComparative Example 2 was produced using the same procedure as that forthe LD device of Example 3. The LD device of Comparative Example 2performed CW oscillation at room temperature where a threshold currentwas about 30 mA and a threshold voltage was about 6.9 V. Thus, the LDdevice of Comparative Example 2 had a threshold voltage higher than thatof the LD device 801 of Example 3 and that of the LD device ofComparative Example 1.

[0090] Further, an LD device was produced in which the active layer 26was composed of a single In_(0.15)Ga_(0.85)N:Mg layer (about 2 nmthick). Such an LD device did not generate laser oscillation when thecarrier gas was hydrogen as well as when the carrier gas was nitrogen.

[0091] The LD devices of Example 3 and Comparative Example 1 and 2 weresubjected to an aging test.

[0092]FIG. 9 shows a variation in a threshold current with respect toaging time. An Increase in threshold current means deterioration of anLD device. It was found that the LD device 801 could perform CWoscillation after 8000-hour aging. The LD device of Comparative Example1 including the p-type layer having a hydrogen concentration of about2×10¹⁹ atoms/cm³ was deteriorated after 10-hour aging. The LD device ofComparative Example 2 including the p-type layer having a hydrogenconcentration of about 8×10¹⁵ atoms/cm³ or less was deteriorated after150-hour aging. Thus, the LD device 801 of Example 3 is a long life LDdevice (semiconductor light emitting device).

[0093]FIG. 1. shows the life of the LD device 801 with respect to thehydrogen concentration of the p-type contact layer 30. The p-typeelectrode 32 was made of Au/Pd, Au/Pt or Au/Ni. The n-type electrode 31was made of Ti/Al. In FIG. 10, an LD device which was not deterioratedafter 8000-hour aging is represented by an LD device having a life of8000 hours. This is because at least 8000 hours had passed after thestart of aging at the time of the measurement shown in FIG. 10. An LDdevice having a life of about 5000 hours or more is regarded as anon-defective product. In FIG. 10, a life of 5000 hours is representedby a broken line.

[0094] As can be seen from FIG. 10, the material for the p-typeelectrode 32 has a great influence on the life of the LD device. WhenAu/Pd is used as the material for the p-type electrode 32, if thehydrogen concentration of the p-type contact layer 30 is greater than orequal to about 1×10¹⁶ atoms/cm³ and less than or equal to about 1×10¹⁹atoms/cm³, an LD device having a life of 5000 hours or more can beobtained. When Au/Ni is used as the material for the p-type electrode32, if the hydrogen concentration of the p-type contact layer 30 isgreater than or equal to about 3×10¹⁶ atoms/cm³ and less than or equalto about 6×10¹⁸ atoms/cm³, an LD device having a life of 5000 hours ormore can be obtained. When Au/Pt is used as the material for the p-typeelectrode 32, if the hydrogen concentration of the p-type contact layer30 is greater than or equal to about 4×10¹⁶ atoms/cm³ and less than orequal to about 5×10¹⁸ atoms/cm³, an LD device having a life of 5000hours or more can be obtained. In the LD devices subjected to the agingtest described with reference to FIG. 10, the range of hydrogenconcentration of the p-type cladding layer 29 was greater than or equalto about 8×10¹⁵ atoms/cm³ and less than or equal to about 3×10¹⁹atoms/cm³ which is the same range as In the p-type contact layer 30.

[0095] As can be seen from FIG. 10, the hydrogen concentration of thep-type layer is preferably greater than or equal to about 1×10¹⁶atoms/cm³ and less than or equal to about 1×10¹⁹ atoms/cm³In order torealize a long-life LD device. The Mg concentration of the p-type layeris preferably greater than or equal to about 4×10¹⁹ atoms/cm³ and lessthan or equal to about 1×10²¹ atoms/cm³. As the Mg concentration of thep-type layer increases, the hydrogen concentration of the p-type layeralso Increases, which is not preferable. It is believed that the reasonthe life of the LD device is reduced when the hydrogen concentration islower than the above-described preferable range, is that the p-typelayer having an extremely low hydrogen concentration is highly resistantand therefore an operating voltage is increased.

[0096] Note that it is not essential that the three layers included inthe p-type layer (i.e., the p-type GaN:Mg guide layer. 28, the p-typeAl_(0.1)Ga_(0.9)N:Mg cladding layer 29, and the p-type Gan:Mg contactlayer 30) have the same hydrogen concentration. If the three layers havea hydrogen concentration in a preferable range, a long-lifesemiconductor light emitting device is achieved.

[0097] As can be seen from FIG. 10, the p-type electrode 32 ispreferably made of Au/Pd. This is due to the same principle as describedabove in terms of the p-type electrode 17 in Example 1. Specifically, ifthe p-type electrode 32 includes a hydrogen storage metal, the p-typeelectrode 32 can absorb the residual hydrogen atoms. The p-typeelectrode 32 may have a multi-layer structure including a hydrogenstorage metal. Alternatively, the p-type electrode 32 may be made of anintermetallic compound including a hydrogen storage metal.

[0098] Further, the life of an LD device was evaluated with respect tothe hydrogen concentration of the p-type cladding layer 29. Theresultant profile is similar to that shown in FIG. 10. When Au/Pd isused as the material for the p-type electrode 32, if the hydrogenconcentration of the p-type cladding layer 29 is greater than or equalto about 1×10¹⁶ atoms/cm³ and less than or equal to about 1×10¹⁹atoms/cm³, an LD device having a life of 5000 hours or more can beobtained. When Au/Ni is used as the material for the p-type electrode32, if the hydrogen concentration of the p-type cladding layer 29 isgreater than or equal to about 3×10¹⁶ atoms/cm³ and less than or equalto about 6×10¹⁶ atoms/cm³ an LD device having a life of 5000 hours ormore can be obtained. When Au/Pt is used as the material for the p-typeelectrode 32, if the hydrogen concentration of the p-type cladding layer29 is greater than or equal to about 4×10¹⁶ atoms/cm³ and less than orequal to about 5×10¹⁸ atoms/cm³, an LD device having a life of 5000hours or more can be obtained.

[0099] The hydrogen concentration of the n-type layer (including then-type contact layer 22, the n-type cladding layer 24 and the n-typeguide layer 25) has an influence on the life of the LD device 801. Thehydrogen concentration of the n-type layer is preferably less than orequal to about 1×10¹⁷ atoms/cm³.

[0100] As shown in FIG. 8, the p-type layer of the LD device 801 isprovided via the anti-evaporation layer 27 on the multiple quantum wellstructure active layer 26. The anti-evaporation layer Z7 includes Alatoms. The Al atoms prevent the residual hydrogen atoms in the p-typelayer from being diffused into the multiple quantum well structureactive layer 26. i.e., the Al atoms prevent deterioration of themultiple quantum well structure active layer 26. Note that the thicknessof the anti-evaporation layer 27 (including Al) is preferably about 5 nmor more in order to sufficiently obtain such an effect.

[0101] The composition of a well layer is not limited toIn_(0.15)Ga_(0.85)N:Mg and the well layer may include Al. A typicalcomposition of the well layer is represented byIn_(x)Ga_((1-x-y))Al_(y)N (where 0≦x, 0≦y, x+y<1). The composition of abarrier layer is not limited to In_(0.05)Ga_(0.95)N. A typicalcomposition of the barrier layer is represented byIn_(x)Ga_((1-x-y))Al_(y)N (where 0≦s, 0≦t, s+t<1)

[0102] In the LD device 801 of Example 3, the cladding layers (i.e., then-type cladding layer 24 and the p-type cladding layer 29) are made ofAl_(0.1)Ga_(0.9)N. The molar ratio of Al is not limited to 0.1. Thecladding layers may be made of a mixed crystal AlGaInN, oralternatively, a super-lattice structure, such as AlGaN/GaN,AlGaN/AlGaN, AlGaInN/AlGaInN, or AlGaInN/GaN. Similar to theanti-evaporation layer 27 containing Al, the p-type cladding layer 29.containing Al can prevent the residual hydrogen atoms in the p-typecontact layer 30 from being diffused into the multiple quantum wellstructure active layer 26. Further, the n-type cladding layer 24containing Al can prevent the residual hydrogen atoms in the n-typecontact layer 22 from being diffused into the multiple quantum wellstructure active layer 26.

[0103]FIG. 11 shows the life of the LD device 801 with respect to the Mgconcentration of the p-type layer. The S p-type electrode 32 was made ofAu/Pd. If the Mg concentration of the p-type layer is greater than orequal to about 2×10¹⁹ atoms/cm³and less than or equal to about 2×10²¹atoms/cm³, the hydrogen concentration of the p-type layer is greaterthan or equal to about 1×10¹⁶ atoms/cm³ and less than or equal to about3×10¹⁹ atoms/cm³. As can be seen from FIG. 11, if the Mg concentrationof the p-type layer is greater than or equal to about 4×10¹⁹ atoms/cm³and less than or equal to about 1×10²¹ atoms/cm³, an LD device having alife of 5000 hours or more can-be obtained.

EXAMPLE 4

[0104] An exemplary LD device according to Example 4 of the presentinvention will be described below. The LD device includes a GaNsubstrate.

[0105]FIG. 12 is a cross-sectional view illustrating an LD device 1201according to Example 4 of the present invention. The LD device 1201 wasproduced using the following procedure.

[0106] A film of GaN:Si having a thickness of about 300 μm was grown ona sapphire substrate (0001-plane) using HVPE. Thereafter, the sapphiresubstrate was removed by polishing to obtain a GaN (0001-plane)substrate 50. An n-type GaN:Si contact layer 51 having a thickness ofabout 0.8 μm and an n-type Al_(0.1)Ga_(0.9)N:Si cladding layer 52 havinga thickness of about 0.5 μm was successively grown at a substratetemperature of about 1100° C. An n-type GaN:Si guide layer 53 having athickness of about 0.1 μm was grown. Up to this growth step, both thecarrier gas and the bubbling gas for an organic metal were hydrogen gas.

[0107] Thereafter, the carrier gas and the bubbling gas for an organicmetal were changed to nitrogen gas, and the substrate temperature waslowered to about 750° C. A multiple quantum well structure active layer54 was grown. In this case, the multiple quantum well structure activelayer 54 is composed of three alternate layerings of anIn_(0.15)Ga_(0.85)N:Si well layer (about 2 nm thick) and anIn_(0.05)Ga_(0.95)N:Si barrier layer (about 4 nm thick). AnAl_(0.1)Ga_(0.9)N:Mg anti-evaporation layer 55 having a thickness of 10nm was grown at the same temperature.

[0108] Thereafter, a p-type GaN:Mg guide layer 56 having a thickness ofabout 0.1 μm, a p-type Al_(0.1)Ga_(0.9)N:Mg cladding layer 57 having athickness of about 0.5 μm, and a p-type GaN:Mg contact layer 58 having athickness of about 0.3 μm were successively grown at a substratetemperature of about 1050° C. where the carrier gas and the bubbling gasfor an organic metal were still nitrogen gas. In this case, the oxygenconcentration of the gas inside the reaction furnace was about 0.08%.

[0109] Thereafter, the wafer having the grown device structure wassubjected to etching so that part of the n-type contact layer 51 wasexposed where the exposed region was in the form of a strip having awidth of about 200 μm. A p-type Au/Pd electrode 60 was formed in theform of a strip having a thickness of about 5 μm on a surface of thep-type contact layer 58. An n-type Ti/Al electrode 61 was formed on abottom surface of the n-type GaN:Si substrate 50.

[0110] The thus-constructed LD device 1201 performed CW oscillation atroom temperature where a threshold current was about 20 mA and athreshold voltage was about 5.0 V. The LD device was subjected to agingat room temperature where a driving current was about 35 mA. As aresult, there was substantially no change in threshold current andthreshold voltage even after 1000-hour aging. Thereby, a long-life LDdevice is achieved.

[0111] As described above, the present invention provides a long-lifesemiconductor light emitting device (an LED device or an LD device),without dependence on the materials used for the substrate and thecrystal growth methods.

[0112] According to the present invention, the hydrogen concentration ofthe p-type layer in a semiconductor light is emitting device is greaterthan or equal to about 1×10¹⁶ atoms/cm³ and less than or equal to about1×10¹⁹ atoms/cm³.

[0113] Thereby, hydrogen atoms in the p-type layer are prevented frombeing diffused into a multiple quantum well structure active layer,thereby suppressing deterioration of the multiple quantum well structureactive layer. Therefore. a long-life semiconductor light emitting deviceis achieved.

[0114] Various other modifications will be apparent to and can bereadily made by those skilled in the art without departing from thescope and spirit of this invention. Accordingly, it is not intended thatthe scope of the claims appended hereto be limited to the description asset forth herein, but rather that the claims be broadly construed.

What is claimed is:
 1. A semiconductor light emitting device comprising:a substrate: an n-type layer provided on the substrate and made of anitride semiconductor material; a multiple quantum well structure activelayer including a plurality of well layers each made ofIn_(x)Ga_((1-x-y))Al_(y)N (0≦x, 0≦y, x+y<1) and a plurality of barrierlayers each made of In_(a)Ga_((1-a-t))Al_(t)N (0≦s, 0≦t, s+t<1), themultiple quantum well structure active layer being provided on then-type layer; and a p-type layer provided on the multiple quantum wellstructure active layer and made of a nitride semiconductor material,wherein the p-type layer contains hydrogen, and the hydrogenconcentration of the p-type layer is greater than or equal to about1×10¹⁶ atoms/cm³ and less than or equal to about 1×10¹⁹ atoms/cm³.
 2. Asemiconductor light emitting device according to claim 1, wherein thep-type layer contains Mg, and the Mg concentration of the p-type layeris greater than or equal to about 4×10¹⁹ atoms/cm³ and less than orequal to about 1×10²¹ atoms/cm³.
 3. A semiconductor light emittingdevice according to claim 1, further comprising a p-type electrode forapplying a voltage via the p-type layer to the multiple quantum wellstructure active layer, wherein the p-type electrode contains atomsselected from the group consisting of Pd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu,Tb, Ti, Zr, Hf, V, Nb and Ta.
 4. A semiconductor light emitting deviceaccording to claim 2, further comprising a p-type electrode for applyinga voltage via the p-type layer to the multiple quantum well structureactive layer, wherein the p-type electrode contains atoms selected fromthe group consisting of Pd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Tb, Ti, Zr,Hf, V, Nb and Ta.
 5. A semiconductor light emitting device according toclaim 1, the hydrogen concentration of the n-type layer is less than orequal to 1×10¹⁷ atoms/cm³.
 6. A semiconductor light emitting deviceaccording to claim 4, the hydrogen concentration of the n-type layer toless than or equal to 1×10¹⁷ atoms/cm³.
 7. A semiconductor lightemitting device according to claim 1, further comprising a layerincluding Al, wherein the p-type layer is provided, via the layerincluding Al, on the multiple quantum well structure active layer.
 8. Asemiconductor light emitting device according to claim 7, the layerincluding Al has a thickness of about 5 nm or more.
 9. A method forproducing a semiconductor light emitting device, the method comprisingthe steps of: growing a nitride semiconductor material on a substrate toform an n-type layer; forming a multiple quantum well structure activelayer Including a plurality of well layers each made ofIn_(x)Ga_((1-x-y))Al_(y)N (0≦x, 0≦y, x+y<1) and a plurality of barrierlayers each made of In_(a)Ga_((1-a-t))Al_(t)N (0≦s, 0≦t, s+t<1), themultiple quantum well structure active layer being provided on then-type layer; and growing a nitride semiconductor material on themultiple quantum well structure active layer to form a p-type layer,wherein the step of growing the p-type layer includes the step ofgrowing a nitride semiconductor material in an atmosphere not containinghydrogen gas while keeping a temperature of the substrate at a firstgrowth temperature.
 10. A method according to claim 9, wherein the stepof forming the p-type layer further includes the step of lowering thetemperature of the substrate from the first growth temperature to about400° C. In the atmosphere not containing hydrogen gas after the step ofgrowing the nitride semiconductor material in the atmosphere notcontaining hydrogen gas.